In this section
@article{Mattevi:2013:10.1557/opl.2012.1042,
author = {Mattevi, C and Colléaux, F and Kim, H and Chhowalla, M and Anthopoulos, TD},
doi = {10.1557/opl.2012.1042},
journal = {Materials Research Society Symposium Proceedings},
pages = {179--184},
title = {Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics},
url = {http://dx.doi.org/10.1557/opl.2012.1042},
volume = {1451},
year = {2013}
}
TY - JOUR
AB - We demonstrate low operating voltage (<|1.5|V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors. © 2012 Materials Research Society.
AU - Mattevi,C
AU - Colléaux,F
AU - Kim,H
AU - Chhowalla,M
AU - Anthopoulos,TD
DO - 10.1557/opl.2012.1042
EP - 184
PY - 2013///
SN - 0272-9172
SP - 179
TI - Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics
T2 - Materials Research Society Symposium Proceedings
UR - http://dx.doi.org/10.1557/opl.2012.1042
VL - 1451
ER -
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