In this section
@article{Prodromakis:2010:10.1109/LED.2010.2052011,
author = {Prodromakis, T and Liu, Y and Constandinou, TG and Georgiou, P and Toumazou, C},
doi = {10.1109/LED.2010.2052011},
journal = {IEEE Electron Device Letters},
pages = {1053--1055},
title = {Exploiting CMOS Technology to Enhance the Performance of ISFET Sensors},
url = {http://dx.doi.org/10.1109/LED.2010.2052011},
volume = {31},
year = {2010}
}
TY - JOUR
AB - This paper presents a novel method for fabricating ISFET devices in unmodified CMOS technologies. Conventional CMOS ISFETs utilise the protective passivation coating as the sensing membrane, with the sensed potential being coupled down to the floating MOS gate via a stack of conducting and insulating layers. The proposed structure minimises the use of these layers by exploiting the passivation opening mask, normally intended for bondpad openings. Parasitic effects such as reduced transconductance and trapped charge within the floating gate structure are minimised, resulting in a lower VT and improved chemical transconductance efficiency. Other characteristics including chemical sensitivity, reference leakage current and noise power are at comparable levels with conventional CMOS-based ISFET devices.
AU - Prodromakis,T
AU - Liu,Y
AU - Constandinou,TG
AU - Georgiou,P
AU - Toumazou,C
DO - 10.1109/LED.2010.2052011
EP - 1055
PY - 2010///
SN - 0741-3106
SP - 1053
TI - Exploiting CMOS Technology to Enhance the Performance of ISFET Sensors
T2 - IEEE Electron Device Letters
UR - http://dx.doi.org/10.1109/LED.2010.2052011
UR - http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5512597
UR - http://hdl.handle.net/10044/1/5968
VL - 31
ER -