BibTex format
@inproceedings{Mifsud:2022:10.1109/iscas48785.2022.9937343,
author = {Mifsud, A and Shen, J and Feng, P and Xie, L and Wang, C and Pan, Y and Maheshwari, S and Agwa, S and Stathopoulos, S and Wang, S and Serb, A and Papavassiliou, C and Prodromakis, T and Constandinou, TG},
doi = {10.1109/iscas48785.2022.9937343},
pages = {75--79},
publisher = {IEEE},
title = {A CMOS-based characterisation platform for emerging RRAM technologies},
url = {http://dx.doi.org/10.1109/iscas48785.2022.9937343},
year = {2022}
}
RIS format (EndNote, RefMan)
TY - CPAPER
AB - Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device’s resistance range to be between 1kΩ and 10MΩ with a minimum voltage range of ±1.5V on the device.
AU - Mifsud,A
AU - Shen,J
AU - Feng,P
AU - Xie,L
AU - Wang,C
AU - Pan,Y
AU - Maheshwari,S
AU - Agwa,S
AU - Stathopoulos,S
AU - Wang,S
AU - Serb,A
AU - Papavassiliou,C
AU - Prodromakis,T
AU - Constandinou,TG
DO - 10.1109/iscas48785.2022.9937343
EP - 79
PB - IEEE
PY - 2022///
SP - 75
TI - A CMOS-based characterisation platform for emerging RRAM technologies
UR - http://dx.doi.org/10.1109/iscas48785.2022.9937343
UR - https://ieeexplore.ieee.org/document/9937343
UR - http://hdl.handle.net/10044/1/101213
ER -