Citation

BibTex format

@article{Liu:2019:10.1109/TBCAS.2019.2947167,
author = {Liu, Y and Constandinou, TG and Georgiou, P},
doi = {10.1109/TBCAS.2019.2947167},
journal = {IEEE Transactions on Biomedical Circuits and Systems},
pages = {1201--1213},
title = {Ultrafast large-scale chemical sensing with CMOS ISFETs: a level-crossing time-domain approach},
url = {http://dx.doi.org/10.1109/TBCAS.2019.2947167},
volume = {13},
year = {2019}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - The introduction of large-scale chemical sensing systems in CMOS which integrate millions of ISFET sensors have allowed applications such as DNA sequencing and fine-pixel chemical imaging systems to be realised. Using CMOS ISFETs provides advantages of digitisation directly at the sensor as well as correcting for non-linearity in its response. However, for this to be beneficial and scale, the readout circuits need to have the minimum possible footprint and power consumption. Within this context, this paper analyses an ISFET based pH-to-time readout using an inverter in the time-domain as a level-crossing detector and presents a 32×32 array with in-pixel digitisation for pH sensing. The inverter-based sensing pixel, controlled by a triangular waveform, converts the pH response into a time-domain signal whilst also compensating for sensor offset and thus resulting in an increase in dynamic range. The sensor pixels interface to a 15-bit asynchronous column-wise time-to-digital converter (TDC), enabling fast asynchronous conversion whilst using minimal silicon area. Parallel outputs of 32 TDC interfaces are serialised to achieve fast data throughput. This system is implemented in a standard 0.18um CMOS technology, with a pixel size of 26μm×26μm and a TDC area of 26μm×180μm. Measured results demonstrate the system is able to sense reliably with an average pH sensitivity of 30mVpH, whilst being able to compensate for sensor offset by up to ±7V. A resolution of 0.013pH is achieved and noise measurements show an integrated noise of 0.08pH within 2-500Hz and SFDR of 42.6dB. Total power consumption is 11.286mW.
AU - Liu,Y
AU - Constandinou,TG
AU - Georgiou,P
DO - 10.1109/TBCAS.2019.2947167
EP - 1213
PY - 2019///
SN - 1932-4545
SP - 1201
TI - Ultrafast large-scale chemical sensing with CMOS ISFETs: a level-crossing time-domain approach
T2 - IEEE Transactions on Biomedical Circuits and Systems
UR - http://dx.doi.org/10.1109/TBCAS.2019.2947167
UR - https://www.ncbi.nlm.nih.gov/pubmed/31613781
UR - http://hdl.handle.net/10044/1/74948
VL - 13
ER -