BibTex format
@article{Heeney:2015:10.1002/adma.201504092,
author = {Heeney, MJ and Han, Y and Fei, Z and McCulloch, I and Stingelin, N and Treat, N and Anthopoulos, T and Faber, H and Zhang, W and Zhu, X and Feng, Y},
doi = {10.1002/adma.201504092},
journal = {Advanced Materials},
pages = {3922--3927},
title = {A Novel Alkylated Indacenodithieno[3,2-b]thiophene-based Polymer for High-performance Field Effect Transistors},
url = {http://dx.doi.org/10.1002/adma.201504092},
volume = {28},
year = {2015}
}
RIS format (EndNote, RefMan)
TY - JOUR
AB - A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear alkyl chains is reported. Its copolymer with benzothiadiazole is an excellent p-type semiconductor, affording a mobility of 6.6 cm² V¹ s¹ in top-gated field-effect transistors with pentafluorobenzenethiol-modified Au electrodes. Electrode treatment with solution-deposited copper(I) thiocyanate (CuSCN) has a beneficial hole-injection/electron-blocking effect, further enhancing the mobility to 8.7 cm² V¹ s¹.
AU - Heeney,MJ
AU - Han,Y
AU - Fei,Z
AU - McCulloch,I
AU - Stingelin,N
AU - Treat,N
AU - Anthopoulos,T
AU - Faber,H
AU - Zhang,W
AU - Zhu,X
AU - Feng,Y
DO - 10.1002/adma.201504092
EP - 3927
PY - 2015///
SN - 1521-4095
SP - 3922
TI - A Novel Alkylated Indacenodithieno[3,2-b]thiophene-based Polymer for High-performance Field Effect Transistors
T2 - Advanced Materials
UR - http://dx.doi.org/10.1002/adma.201504092
UR - http://hdl.handle.net/10044/1/27477
VL - 28
ER -