BibTex format
@article{Voigt:2010:10.1002/adfm.200901597,
author = {Voigt, MM and Guite, A and Chung, D-Y and Khan, RUA and Campbell, AJ and Bradley, DDC and Meng, F and Steinke, JHG and Tierney, S and McCulloch, I and Penxten, H and Lutsen, L and Douheret, O and Manca, J and Brokmann, U and Soennichsen, K and Huelsenberg, D and Bock, W and Barron, C and Blanckaert, N and Springer, S and Grupp, J and Mosley, A},
doi = {10.1002/adfm.200901597},
journal = {ADVANCED FUNCTIONAL MATERIALS},
pages = {239--246},
title = {Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate},
url = {http://dx.doi.org/10.1002/adfm.200901597},
volume = {20},
year = {2010}
}
RIS format (EndNote, RefMan)
TY - JOUR
AU - Voigt,MM
AU - Guite,A
AU - Chung,D-Y
AU - Khan,RUA
AU - Campbell,AJ
AU - Bradley,DDC
AU - Meng,F
AU - Steinke,JHG
AU - Tierney,S
AU - McCulloch,I
AU - Penxten,H
AU - Lutsen,L
AU - Douheret,O
AU - Manca,J
AU - Brokmann,U
AU - Soennichsen,K
AU - Huelsenberg,D
AU - Bock,W
AU - Barron,C
AU - Blanckaert,N
AU - Springer,S
AU - Grupp,J
AU - Mosley,A
DO - 10.1002/adfm.200901597
EP - 246
PY - 2010///
SN - 1616-301X
SP - 239
TI - Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate
T2 - ADVANCED FUNCTIONAL MATERIALS
UR - http://dx.doi.org/10.1002/adfm.200901597
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000274269300008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL - 20
ER -