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@inproceedings{Moser:2017,
author = {Moser, N and Panteli, C and Ma, D and Toumazou, C and Fobelets, K and Georgiou, P},
publisher = {IEEE},
title = {Improving the pH Sensitivity of ISFET Arrays withReactive Ion Etching},
url = {http://hdl.handle.net/10044/1/51847},
year = {2017}
}

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TY  - CPAPER
AB  - In this paper, we report a method to improvesensitivity for CMOS ISFET arrays using Reactive Ion Etching(RIE) as a post-processing technique. The process etches awaythe passivation layers of the commercial CMOS process, using anoxygen (O2) and sulfur hexafluoride (SF6) plasma. The resultingattenuation and pH sensitivity are characterised for five diesetched for 0 to 15 minutes, and we demonstrate that capacitiveattenuation is reduced by 196% and pH sensitivity increasedby 260% compared to the non-etched equivalent. The spread oftrapped charge is also reduced which relaxes requirements on theanalogue front-end. The technique significantly improves the performanceof the fully-integrated sensing system for applicationssuch as DNA detection.
AU  - Moser,N
AU  - Panteli,C
AU  - Ma,D
AU  - Toumazou,C
AU  - Fobelets,K
AU  - Georgiou,P
PB  - IEEE
PY  - 2017///
TI  - Improving the pH Sensitivity of ISFET Arrays withReactive Ion Etching
UR  - http://hdl.handle.net/10044/1/51847
ER  -

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