In this section
@article{Georgiou:2009:10.1016/j.snb.2009.09.018,
author = {Georgiou, P and Toumazou, C},
doi = {10.1016/j.snb.2009.09.018},
journal = {SENSORS AND ACTUATORS B-CHEMICAL},
pages = {211--217},
title = {ISFET characteristics in CMOS and their application to weak inversion operation},
url = {http://dx.doi.org/10.1016/j.snb.2009.09.018},
volume = {143},
year = {2009}
}
TY - JOUR
AU - Georgiou,P
AU - Toumazou,C
DO - 10.1016/j.snb.2009.09.018
EP - 217
PY - 2009///
SP - 211
TI - ISFET characteristics in CMOS and their application to weak inversion operation
T2 - SENSORS AND ACTUATORS B-CHEMICAL
UR - http://dx.doi.org/10.1016/j.snb.2009.09.018
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000272376800033&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL - 143
ER -
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