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@article{PAPAVASSILIOU:2001,
author = {PAPAVASSILIOU, C and FOBELETS, K and TOUMAZOU, C},
journal = {IEICE transactions on electronics},
pages = {1414--1422},
title = {SiGe Hetero-FETs Potential for Micropower Applications(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)},
volume = {84},
year = {2001}
}

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TY  - JOUR
AB  - Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
AU  - PAPAVASSILIOU,C
AU  - FOBELETS,K
AU  - TOUMAZOU,C
EP  - 1422
PY  - 2001///
SN  - 0916-8524
SP  - 1414
TI  - SiGe Hetero-FETs Potential for Micropower Applications(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
T2  - IEICE transactions on electronics
VL  - 84
ER  -

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