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@inproceedings{Prodromakis:2010,
author = {Prodromakis, T and Michelakis, K and Toumazou, C},
title = {Fabrication and Electrical Characteristics of Memristors with TiO2/TiO2+x active layers},
year = {2010}
}

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TY  - CPAPER
AB  - We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which containsexcess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2−x active cores.
AU  - Prodromakis,T
AU  - Michelakis,K
AU  - Toumazou,C
PY  - 2010///
TI  - Fabrication and Electrical Characteristics of Memristors with TiO2/TiO2+x active layers
ER  -

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