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@article{Prodromakis:2010:10.1049/el.2010.2716,
author = {Prodromakis, T and Michelakis, K and Toumazou, C},
doi = {10.1049/el.2010.2716},
journal = {ELECTRON LETT},
pages = {63--64},
title = {Switching mechanisms in microscale memristors},
url = {http://dx.doi.org/10.1049/el.2010.2716},
volume = {46},
year = {2010}
}

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TY  - JOUR
AB  - It is only very recently that the memristor, the fourth missing passive element, was discovered, as technological advances and the scaling-down to nanometre dimensions in particular resulted in clearly evident and measurable memristance. At the nanoscale, these devices exhibit variable resistive behaviour, which can be applied in switching networks and memory. Experimental evidence is provided that micrometre-size memristors are viable with practical R-OFF/R-ON ratios.
AU  - Prodromakis,T
AU  - Michelakis,K
AU  - Toumazou,C
DO  - 10.1049/el.2010.2716
EP  - 64
PY  - 2010///
SN  - 0013-5194
SP  - 63
TI  - Switching mechanisms in microscale memristors
T2  - ELECTRON LETT
UR  - http://dx.doi.org/10.1049/el.2010.2716
VL  - 46
ER  -

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