Publications

Citation

BibTex format

@inproceedings{Gantier:2018:10.1109/ISCAS.2018.8351615,
author = {Gantier, M and Kalofonou, M and Toumazou, C},
doi = {10.1109/ISCAS.2018.8351615},
publisher = {IEEE},
title = {A trapped charge compensation scheme for ISFET based translinear circuits},
url = {http://dx.doi.org/10.1109/ISCAS.2018.8351615},
year = {2018}
}

Download

RIS format (EndNote, RefMan)

TY  - CPAPER
AB  - A trapped charge compensation scheme for ISFET based translinear circuits is presented, as part of a system for prediction of cancer risk, based on DNA methylation. Each pixel is able to measure a DNA methylation ratio through pH-based measurements and by using in-pixel comparison to a tunable threshold, to output a result which indicates percentage of methylation used as a cancer score. The developed system was designed in a 0.35 μm CMOS technology and uses a novel trapped charge compensation scheme for ISFETs used in translinear circuits. The output scheme was able to compensate trapped charge of up to 380mV, with a ratio error below 5%, in a range of ratios between 50% and 80% which is generated from pH-based DNA methylation reactions.
AU  - Gantier,M
AU  - Kalofonou,M
AU  - Toumazou,C
DO  - 10.1109/ISCAS.2018.8351615
PB  - IEEE
PY  - 2018///
TI  - A trapped charge compensation scheme for ISFET based translinear circuits
UR  - http://dx.doi.org/10.1109/ISCAS.2018.8351615
UR  - https://ieeexplore.ieee.org/abstract/document/8351615/
ER  -

Download

Citation

BibTex format

RIS format (EndNote, RefMan)

Contact us